Abstract: This paper presents the design and development of a high-precision nano-silver sintering system for silicon carbide power module packaging. The system achieves precise control over key sintering process parameters—temperature, pressure, and atmosphere—through multi-field cooperative control. The equipment employs a zoned straight-tube heating system and a pneumatic pressure boost scheme, combined with low-oxygen atmosphere control. Under the process conditions of 230°C and 25 MPa, it achieves a pressure uniformity better than ±3% and a temperature uniformity within ±3°C, while maintaining oxygen content below 50 ppm. The uniformity of pressure and temperature distribution was validated using pressure-sensitive paper and multiple thermocouples, respectively. Ultrasonic and CT inspections confirmed that the resulting joint interfaces exhibit low porosity and high connection reliability. Finite element analysis revealed a stress distribution pattern during sintering where higher stress occurs at the chip edges and lower stress in the central area. This equipment and process provide an effective solution for reliable packaging of high-performance power electronic devices.