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    SiC/AMB纳米银封装设备设计及验证

    Development and Verification of a Nano-silver Sintering System for SiC/AMB Substrates

    • 摘要: 为解决碳化硅(SiC)功率模块封装中纳米银烧结工艺对温度、压力及气氛多场协同控制的迫切需求,设计并开发了一种高精度纳米银烧结设备。该设备采用分区直管加热与气动增压协同控制架构,结合低氧气氛闭环调控,实现了对烧结过程中关键工艺参数的精确匹配与动态稳定。实验结果表明,在温度为230 °C、压力为25 MPa的典型工艺条件下,系统温度均匀性优于±3 °C,压力均匀性优于±3%,腔体氧气含量稳定控制在50 μL/L以下,综合性能显著优于同类型现有设备。通过压敏纸与多热电偶测温验证了压力与温度场的高一致性,超声与计算机断层扫描检测进一步表明所制备的SiC/AMB接头界面孔洞率低、连接质量可靠。有限元模拟揭示了烧结过程中芯片边缘应力集中、中心区域应力较小的分布特征,为工艺优化提供了理论依据。该研究不仅研制出具备优异综合性能的烧结设备,更在气氛控制与多场耦合方法上实现了重要突破,为高性能功率电子器件的封装提供了可靠的工艺平台与技术支持。

       

      Abstract: To address the urgent demand for multi-field cooperative control of temperature, pressure, and atmosphere in the nano-silver sintering process for SiC power module packaging, a high-precision nano-silver sintering system has been designed and developed. The system adopts a cooperative control framework combining zoned straight-tube heating and pneumatic pressurization, together with closed-loop low-oxygen atmosphere regulation, to realize precise matching and dynamic stability of key process parameters in the sintering process. Experimental results show that under typical process conditions of 230 °C and 25 MPa, the system achieves a temperature uniformity better than ±3 °C, a pressure uniformity better than ±3%, and stably controls the chamber oxygen content below 50 μL/L. Its comprehensive performance is significantly superior to that of existing similar systems. The high consistency of the pressure and temperature fields is verified using pressure-sensitive paper and multiple thermocouple temperature measurements. Ultrasonic and computed tomography inspections further demonstrate that the prepared SiC/AMB joint interfaces exhibit low porosity and reliable connection quality. Finite element simulation reveals the distribution characteristics of higher stress at the chip edges and lower stress in the central region during sintering, providing a theoretical basis for process optimization. In this research sintering system with excellent comprehensive performance is developed, and an important breakthrough in atmosphere control and multi-field coupling methods is represented, thereby providing a reliable process platform and technical support for the packaging of high-performance power electronic devices.

       

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