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    基于硅基异构集成的BGA互连可靠性研究

    Research on BGA Interconnection Reliability of Silicon-based Heterogeneous Integration

    • 摘要: 针对有源相控阵雷达组件微系统化的需求,文中提出了一种基于硅基的垂直硅通孔(Through Silicon Via, TSV)基板与AlN 高温共烧陶瓷 (High Temperature Co-fired Ceramic, HTCC)厚薄膜混合基板的高密度异质异构集成方案,基板间采用球形栅格阵列(Ball Grid Array, BGA)实现互连。通过有限元仿真软件建立了封装模型,采用Anand本构模型对锡铅、无铅焊料BGA在−55 ℃ ~ 85 ℃温度循环载荷下内部等效应变的分布情况进行了仿真分析,基于田口正交法对BGA高度、球径、节距三个因素进行了优化设计,并采用Coffin-Manson公式对优化前后焊点的寿命进行了预测对比。仿真结果表明,位于基板边缘处的BGA等效应变最大,是导致整个集成架构失效的关键焊点。仿真及实验结果均表明,优化BGA的结构参数可以有效提升集成架构的可靠性。

       

      Abstract: To meet the requirements of the micromation of active phased array radar module, a high-density heterogeneous integration scheme is proposed for through silicon via (TSV) substrate and AlN high temperature co-fired ceramic (HTCC) thick-thin film hybrid substrate using ball grid array (BGA) interconnection in this paper. A packaging model is established using finite element simulation software and the Anand constitutive model is used to analyze the effective strain distribution within the leaded and lead-free BGA under temperature cyclic load from −55 ℃ to 85 ℃. Optimization design is conducted based on the Taguchi method, focusing on BGA height, ball diameter and pitch. The fatigue lives of the solder joints before and after optimization are predicted and compared with the Coffin-Mason formula. Simulation results show that the effective strain of BGA at the edge of the substrate is the largest and it is the key solder joint resulting in failure of the whole integration architecture. The results of simulation and experiment both indicate that the reliability of integration architecture can be effectively improved by optimizing the structure parameters of BGA.

       

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