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    基于氮化铝HTCC基板的化学镀镍硼工艺研究

    Study on Electroless Nickel Boron Process Based on AlN HTCC Substrate

    • 摘要: 氮化铝(AlN)高温共烧陶瓷(High Temperature Co-fired Ceramic,HTCC)基板具有高的热导率以及与芯片匹配的热膨胀系数,是高功率多芯片组件首选的基板材料和封装材料。为了满足封装要求的良好钎焊性能,文中采用化学镀工艺在氮化铝HTCC基板钨导体表面沉积了化学镍钯金镀层。文中对化学镀镍溶液体系和高温热处理的工艺条件进行了研究,对化学镍层的厚度进行了优化。结果表明,高温热处理促使薄镍层向基板表面钨导体扩散,进而提高化学镀层与基底之间的附着力,镀层附着力良好,满足金丝键合和锡铅焊的要求,为微波高功率组件的研制提供了技术支撑。

       

      Abstract: AlN high temperature co-fired ceramic (HTCC) substrates with high thermal conductivity and thermal expansion coefficient matched with the chip are the preferred substrate material and packaging material for high power multichip module. In this paper an electroless Ni-B/ electroless Pd/ electroless Au-ENEPEG coating is deposited on the surface of the tungsten conductor of AlN HTCC substrates to provide goal solderability. The nickel electroless solution system and the process conditons of high temperature heat treatment are studied. The thickness of the nickel layer is optimized. The results show that high temperature heat treatment promotes the diffusion of the thin nickel layer to the tungsten conductor on the substrate surface, thereby improving the adhesion between the electroless plating layer and the substrate. The coating has good adhesion and meets the requirements of gold wire bonding and tin-lead soldering, which provides technical support for the development of microwave high-power module.

       

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