Abstract: To meet the requirement of high power density for radar arrays, SiC wide-band semiconductor devices gradually replace traditional silicon power devices in power modules. The traditional solder and conductive glue have the disadvantages of poor electrical conductivity, high thermal resistance and high temperature creep, so the advantages of the high junction temperature and high power density of SiC power devices cannot be exploited. Nano-silver sintering is one of the most applicable interface interconnection technologies for high power devices, which is sintering at low temperature and has good high temperature working characteristics. In order to realize the low voltage-drop and efficient heat dissipation for high current transmission of high power modules, this paper studies the nano-silver double-sided sintering technology for SiC chips based on high power half-bridge modules. The key technologies such as Ag clips forming, nano-silver paste high flatness spot coating, pressureless sintering are improved greatly. The sintering process parameters are optimized through the microstructure analysis of sintering interface and the tests of chip sheer strength and clip peel strength. Finally, static tests and double pulse tests are carried out for the half-bridge module. The gate leakage current of the module is less than 1.5 nA, the switching time is less than 125 ns and the drain voltage overshoot is less than 12.5%, which meet the product application requirements.