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    WANG J Q, YAN K, SUN W, et al. Research on BGA interconnection reliability of silicon-based heterogeneous integration[J]. Electro-Mechanical Engineering, 2025, 41(3): 74−79. DOI: 10.19659/j.issn.1008–5300.20250320017
    Citation: WANG J Q, YAN K, SUN W, et al. Research on BGA interconnection reliability of silicon-based heterogeneous integration[J]. Electro-Mechanical Engineering, 2025, 41(3): 74−79. DOI: 10.19659/j.issn.1008–5300.20250320017

    Research on BGA Interconnection Reliability of Silicon-based Heterogeneous Integration

    • To meet the requirements of the micromation of active phased array radar module, a high-density heterogeneous integration scheme is proposed for through silicon via (TSV) substrate and AlN high temperature co-fired ceramic (HTCC) thick-thin film hybrid substrate using ball grid array (BGA) interconnection in this paper. A packaging model is established using finite element simulation software and the Anand constitutive model is used to analyze the effective strain distribution within the leaded and lead-free BGA under temperature cyclic load from −55 ℃ to 85 ℃. Optimization design is conducted based on the Taguchi method, focusing on BGA height, ball diameter and pitch. The fatigue lives of the solder joints before and after optimization are predicted and compared with the Coffin-Mason formula. Simulation results show that the effective strain of BGA at the edge of the substrate is the largest and it is the key solder joint resulting in failure of the whole integration architecture. The results of simulation and experiment both indicate that the reliability of integration architecture can be effectively improved by optimizing the structure parameters of BGA.
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