High Aspect Ratio TSV Electroplating Filling Technology

With the development of electronic devices towards miniaturization, multi-function and high power density, the through silicon via (TSV) technology has been paid more and more attention to by the electronic industry. The hole electroplating filling technology is one of the key technologies of TSV. The mechanism of hole electroplating filling and the influence of various additives on TSV filling are discussed in this paper. Meanwhile, the current situation of TSV plating equipment both at home and abroad is compared. The causes and solutions of cavity in TSV copper column are analyzed as an emphasis. It is concluded that there are two causes: current aggregation effect and the mass transfer effect. On this basis, TSV filling(without cavity)with a diameter of 30 μm and depth of 210 μm is realized, which can provide a reference for the development of domestic TSV technology.